Epitaxial growth of CoSi2on (111)Si inside miniature‐size oxide openings by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348400
Reference17 articles.
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4. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
5. Epitaxial Growth of Transition Metal Silicides on Silicon
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1. Fabrication of 2D ordered arrays of cobalt silicide nanodots on (001)Si substrates;Journal of Crystal Growth;2007-03
2. Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si;Materials Science and Engineering: A;2005-11
3. Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate;Applied Physics Letters;2005-05-30
4. Epitaxial growth of NiSi[sub 2] on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si[sub 3]N[sub 4] layer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
5. Effects of stress on the interfacial reactions of metal thin films on (001)Si;Thin Solid Films;2003-01
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