Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344959
Reference25 articles.
1. Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ions
2. Reordering of implanted amorphous layers in gaas
3. Ion implantation damage in GaAs: A TEM study of the variation with ion species and stoichiometry
4. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
5. Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions;Nanomaterials;2017-07-11
2. Void evolution and porosity under arsenic ion irradiation in GaAs1−xSbxalloys;Journal of Physics D: Applied Physics;2017-02-20
3. Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
4. Beam flux dependence of ion-irradiation-induced porous structures in III–V compound semiconductors;Radiation Effects and Defects in Solids;2013-04
5. Formation of Nano-structure on Semiconductor Surface by Ion Irradiation;Materia Japan;2013
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3