Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
Author:
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/7/7/180/pdf
Reference42 articles.
1. Radiation-Induced Expansion of Semiconductors
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3. Anomalous behavior of ion‐implanted GaSb
4. Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering
5. Formation of cellular defect structure on GaSb ion-implanted at low temperature
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