Formation of cellular defect structure on GaSb ion-implanted at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1493662
Reference13 articles.
1. Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide
2. Amorphization in gallium arsenide by tin and iron ion implantation
3. Microtwin formation in gallium arsenide by iron ion implantation and amorphization by annealing
4. Radiation-Induced Expansion of Semiconductors
5. Anomalous sputtering of gallium–antimonide under cesium‐ion bombardment
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