Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering-Reference-Cited by-同舟云学术

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering

Published:1999-09-03 Issue:5433 Volume:285 Page:1551-1553
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Facsko S.¹,Dekorsy T.¹,Koerdt C.¹,Trappe C.¹,Kurz H.¹,Vogt A.²,Hartnagel H. L.²

Affiliation:

1. Institute of Semiconductor Electronics, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, 52074 Aachen, Germany.

2. Institut für Hochfrequenztechnik, TU Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany.

Abstract

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference21 articles.

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4. S. Facsko et al. patent pending.

5. G. Carter B. Navinšek L. Whitton in Sputtering by Particle Bombardment II vol. 64 of Topics in Applied Physics R. Behrisch Ed. (Springer-Verlag New York 1991) pp. 231–269.

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