Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ions
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337576908235565
Reference22 articles.
1. Mayer, J. W. and Marsh, O. J. Technical Report Air Force Avionics Lab., A.F.A.L. TR/67/282.
2. Ion-implantation doping of semiconductors
Cited by 75 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of Anisotropic Regular Nanostructures on GaAs Surface due to Normal Incidence Ion Irradiation: A study on Temperature Dependence;IOP Conference Series: Materials Science and Engineering;2016-09
2. Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy;physica status solidi (b);2015-01-20
3. Thermally induced amorphous to crystalline transformation of argon ion bombarded GaAs studied with surface Brillouin and Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
4. Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation;MATERIALS TRANSACTIONS;2002
5. Anomalous Defect Structure Formed on GaSb Surface by Low Temperature Sn Ion-Implantation and Its Formation Mechanism;Journal of the Japan Institute of Metals;2000
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3