Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92602
Reference6 articles.
1. An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets
2. Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
3. Incorporation of boron during the growth of GaAs single crystals
4. Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs
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1. Transmission Electron Microscopy of Be Implanted Si-Doped GaAs;physica status solidi (a);2000-12
2. Rutherford backscattering spectrometry and channeling studies on MeV Au-implanted GaAs(100) crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-06
3. Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs;Applied Physics Letters;1994-07-04
4. Major Implantation‐Induced Defects in Conventional and Rapid Annealed, Silicon Implanted LEC‐Grown GaAs;Journal of The Electrochemical Society;1991-01-01
5. Characterization of ion‐implanted and rapidly thermal annealed GaAs by Raman scattering and van der Pauw measurement;Journal of Applied Physics;1990-06-15
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