Ion migration in crystalline and amorphous HfOX-Reference-Cited by-同舟云学术

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Ion migration in crystalline and amorphous HfOX

Published:2017-03-07 Issue:9 Volume:146 Page:094508
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Schie Marcel¹^ORCID,Müller Michael P.²,Salinga Martin³^ORCID,Waser Rainer¹,De Souza Roger A.²^ORCID

Affiliation:

1. Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52056 Aachen, Germany

2. Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT, 52056 Aachen, Germany

3. I. Physikalisches Institut 1A, RWTH Aachen University, 52056 Aachen, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977453

Reference51 articles.

1. Electronic properties of hafnium oxide: A contribution from defects and traps

2. Electrolytic Behavior of Yttria-Stabilized Hafnia

3. Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation

4. Oxygen Self-Diffusion inHfO2Studied by Electron Spectroscopy

5. Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

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