Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films

Abstract

Oxygen diffusion coefficients in the metastable ferroelectric phase of polycrystalline hafnium zirconium oxide (HZO) thin films have been quantified using 18O tracers and time-of-flight secondary ion mass spectrometry. 11.5 nm thick HZO films containing 16O were deposited by plasma-enhanced atomic layer deposition followed by post-metallization annealing to crystallize into the ferroelectric phase. A 1.2 nm thick HZO layer containing 18O was then deposited using thermal atomic layer deposition with H218O as a reactant. Thermal anneals were conducted at 300, 350, and 400 °C and the ferroelectric phase confirmed after the anneals by x-ray diffraction, infrared spectroscopy, and electrical property measurements. 18O depth profiles were measured and fit with a thin film diffusion equation to determine the oxygen diffusion coefficients. Oxygen diffusion coefficients ranged from approximately 2 × 10−18 cm2/s at 300 °C to 5 × 10−17 cm2/s at 400 °C with an activation energy of 1.02 ± 0.24 eV.