Oxygen tracer diffusion in amorphous hafnia films for resistive memory-Reference-Cited by-同舟云学术

Oxygen tracer diffusion in amorphous hafnia films for resistive memory

Published:2024 Issue:10 Volume:11 Page:2372-2381
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Shin Dongjae¹^ORCID,Ievlev Anton V.²^ORCID,Beckmann Karsten³⁴^ORCID,Li Jingxian¹^ORCID,Ren Pengyu¹^ORCID,Cady Nathaniel³^ORCID,Li Yiyang¹^ORCID

Affiliation:

1. Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA

2. Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, USA

3. College of Nanotechnology, Science and Engineering, University at Albany, Albany, NY, USA

4. NY CREATES, Albany, NY, USA

Abstract

We quantified the oxygen tracer diffusion in amorphous hafnium oxide thin films. These tracer diffusion values are consistent with the experimentally measured retention times of hafnium oxide resistive memory devices.

Funder

Office of Science

Division of Electrical, Communications and Cyber Systems

Air Force Research Laboratory

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D3MH02113K

Reference47 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

2. Memristive devices for computing

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