Buffer layer effects on residual stress in InP on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101281
Reference7 articles.
1. GaAs heteroepitaxial growth on Si for solar cells
2. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates
3. First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate
4. Residual strains in heteroepitaxial III‐V semiconductor films on Si(100) substrates
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1. Heteroepitaxial Growth of III-V Semiconductors on Silicon;Crystals;2020-12-21
2. Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on- Si Electronics and Optoelectronics;Physical Review Applied;2019-06-19
3. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition;Materials;2018-02-26
4. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure;ACS Applied Materials & Interfaces;2016-09-28
5. Stress Engineering and Optimization of Thick Garnet Crystal Films Grown by Pulsed Laser Deposition;Crystal Growth & Design;2011-03-09
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