Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2005389
Reference25 articles.
1. Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP
2. Growth of Ga0.46In0.54NyAs1-ySingle Quantum Wells on InP(100) Substrate by Metalorganic Chemical Vapor Deposition
3. Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
4. Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
5. Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
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