Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819731
Reference21 articles.
1. One-dimensional heterostructures in semiconductor nanowhiskers
2. Silicon Vertically Integrated Nanowire Field Effect Transistors
3. Doping and Electrical Transport in Silicon Nanowires
4. GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements
5. High frequency characterization of a Schottky contact to a GaN nanowire bundle
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3. Point defects and oxygen deficiency in GaN nanoparticles decorating GaN:O nanorods: an XPS and CL study;Applied Physics A;2021-07-16
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