High frequency characterization of a Schottky contact to a GaN nanowire bundle-Reference-Cited by-同舟云学术

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High frequency characterization of a Schottky contact to a GaN nanowire bundle

Published:2010-06-15 Issue:12 Volume:107 Page:124301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chiang Chin-Jen,Wallis T. Mitch,Gu Dazhen,Imtiaz Atif,Kabos Pavel,Blanchard Paul T.,Bertness Kristine A.,Sanford Norman A.,Kim Kichul,Filipovic Dejan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3428391

Reference32 articles.

1. An RF circuit model for carbon nanotubes

2. Very wide bandwidth hot electron bolometer heterodyne detectors based on single-walled carbon nanotubes

3. Radio-frequency characterization for the single-walled carbon nanotubes

4. An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

5. High-frequency electrical properties of individual and bundled carbon nanotubes

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave Schottky Diodes based on Single GaN Nanowires;Technical Physics Letters;2023-12

2. Extremely high frequency Schottky diodes based on single GaN nanowires;Nanotechnology;2023-03-30

3. Structural, electrical, and optical characterization of coalescentp-nGaN nanowires grown by molecular beam epitaxy;Journal of Applied Physics;2015-12-14

4. Adaptive and robust statistical methods for processing near-field scanning microwave microscopy images;Ultramicroscopy;2015-03

5. GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy;Nanotechnology;2014-09-26

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