Modification of Al2O3/InP interfaces using sulfur and nitrogen passivations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4982904
Reference29 articles.
1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
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3. Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate
4. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
5. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric
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