Modification of Al2O3/InP interfaces using sulfur and nitrogen passivations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4982904
Reference29 articles.
1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
2. Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack
3. Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate
4. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
5. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric
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1. Lowering of interface state density between deposited gate oxide and SiC substrate via controlling substrate oxidation;Vacuum;2024-04
2. Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device;Applied Surface Science;2022-05
3. In situ isotope study of indium diffusion in InP/Al2O3 stacks;Applied Physics Letters;2022-01-17
4. Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window;IEEE Journal of the Electron Devices Society;2022
5. Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide;Semiconductor Science and Technology;2021-11-10
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