InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric-Reference-Cited by-同舟云学术

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InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Published:2011-02-21 Issue:8 Volume:98 Page:082106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xue Fei,Zhao Han,Chen Yen-Ting,Wang Yanzhen,Zhou Fei,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3559609

Reference16 articles.

1. IEEE Device Research Conference;Lin T. D.,2008

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