Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas
Author:
Affiliation:
1. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962432
Reference18 articles.
1. Ultra-high hole mobility exceeding one million in a strained germanium quantum well
2. Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(0 0 1) substrate
3. An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
4. Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
5. Spinless composite fermions in an ultrahigh-quality strained Ge quantum well
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