Deep depletion concept for diamond MOSFET-Reference-Cited by-同舟云学术

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Deep depletion concept for diamond MOSFET

Published:2017-10-23 Issue:17 Volume:111 Page:173503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pham T. T.¹²³,Rouger N.⁴,Masante C.¹²³,Chicot G.¹³,Udrea F.⁵,Eon D.¹²,Gheeraert E.¹²⁶^ORCID,Pernot J.¹²⁷^ORCID

Affiliation:

1. Univ. Grenoble Alpes, F-38042 Grenoble, France

2. CNRS, Inst. NEEL, F-38042 Grenoble, France

3. CNRS, G2Elab, F-38042 Grenoble, France

4. Université de Toulouse; LAPLACE; CNRS; INPT; UPS, F-31071 Toulouse, France

5. Department of Engineering, The University of Cambridge, CB2 1PZ Cambridge, United Kingdom

6. University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan

7. Institut Universitaire de France, 103 boulevard Saint Michel, 75005 Paris, France

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997975

Reference16 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. Surface transfer doping of diamond

3. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

4. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond

5. Diamond field-effect transistors for RF power electronics: Novel NO2hole doping and low-temperature deposited Al2O3passivation

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1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

2. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs;IEEE Transactions on Electron Devices;2024-03

3. Development and Recent Progress on Diamond Semiconductor Devices;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

4. Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics;physica status solidi (a);2024-02-29

5. High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond;Advanced Science;2024-01-19

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