Diamond field-effect transistors for RF power electronics: Novel NO2hole doping and low-temperature deposited Al2O3passivation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=1S/a=01AA01/pdf
Reference32 articles.
1. Diamond: Electronic Properties and Applications
2. Semiconductors for high‐voltage, vertical channel field‐effect transistors
3. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
4. Hole-drift velocity in natural diamond
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