Chemical vapor deposition and deep level analyses of 4H-SiC(112̄0)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1368863
Reference20 articles.
1. Performance limiting micropipe defects in silicon carbide wafers
2. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
3. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
4. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
5. Structural defects in α-SiC single crystals grown by the modified-Lely method
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2. High-voltage SiC power devices for improved energy efficiency;Proceedings of the Japan Academy, Series B;2022-04-11
3. Directly Confirming the Z 1/2 Center as the Electron Trap in SiC Through Accessing the Nonradiative Recombination;physica status solidi (RRL) – Rapid Research Letters;2021-11-14
4. Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain;Microsystem Technologies;2018-09-03
5. Silicon Carbide Epitaxy;Handbook of Crystal Growth;2015
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