Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803037
Reference60 articles.
1. GaAs/Ge/GaAs heterostructures by molecular beam epitaxy
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3. High efficiency GaAs/Ge monolithic tandem solar cells
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2. Effect of Ge autodoping during III-V MOVPE growth on Ge substrates;Journal of Crystal Growth;2017-10
3. Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP;Journal of Applied Physics;2016-03-21
4. Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains;MRS Advances;2016-03-01
5. Review—Device Assessment of Electrically Active Defects in High-Mobility Materials;ECS Journal of Solid State Science and Technology;2016
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