Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370865
Reference25 articles.
1. III–V nitride based light-emitting devices
2. Solid phase immiscibility in GaInN
3. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
4. Phase separation in InGaN grown by metalorganic chemical vapor deposition
5. Phase separation in InGaN/GaN multiple quantum wells
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2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06
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5. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14
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