Elastic relaxation in patterned and implanted strained silicon on insulator
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3137200
Reference30 articles.
1. Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure
2. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
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