Annealing characteristics and electrical properties of 1‐MeV arsenic‐ion‐implanted layers in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347193
Reference16 articles.
1. Megavolt Bioron and Arsenic Implantation into Silicon
2. A retrograde p-well for higher density CMOS
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4. Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector
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