Author:
Nipoti Roberta,Servidori Marco
Reference37 articles.
1. “Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide,”;Addamiano;J. Electrochem. Soc.,1972
2. “Different Methods for the Determination of Damage Profiles in Si from RBS-Channeling Spectra: A Comparison,”;Albertazzi;Nucl. Instrum. Meth.,1996
3. “Comparative Analysis of Extended Defect Depth Profiles in Silicon by Rutherford Backscattering, X-Ray and Electron Microscopy,”;Bentini;Nucl. Instrum. Meth.,1987
4. “RBS-Channeling Spectra: Simulation of As-Implanted Si Samples Through an Empirical Formula for <100> Axial Dechanneling of He in Silicon,”;Bianconi;Nucl. Instrum. Meth.,1994
5. “Recrystallization of Ion-Implanted α-SiC,”;Bohn;J. Material Res.,1987
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depth profile analysis of 100 keV Ni ions in Si 〈100〉 substrate;Spectrochimica Acta Part B: Atomic Spectroscopy;2023-08
2. Ion-beam induced damage and annealing behaviour in SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05