Ion-beam induced damage and annealing behaviour in SiC-Reference-Cited by-同舟云学术

Ion-beam induced damage and annealing behaviour in SiC

Published:1998-05 Issue:1-4 Volume:141 Page:105-117
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wendler E.,Heft A.,Wesch W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference56 articles.

1. In situ and ex situ investigation of ion-beam-induced amorphization in α-SiC

2. Ion implantation effects in silicon carbide

3. Ion beam processing of single crystalline silicon carbide

4. Ion Implantation and Annealing Effects in Silicon Carbide

5. W.J. Weber, L.M. Wang, N. Yu, N.J. Hess, presented at Engineering Foundation Conference on Modification of Ceramics and Semiconductors by Ion Bombardment, 19–23 May 1997, Castelvecchio Pascoli – Il Ciocco, Italy, to be published in Materials Science and Engineering

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