Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100742
Reference20 articles.
1. Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys
2. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
3. Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy
4. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
5. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
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1. Design of InGaAsP phase modulator with asymmetrically coupled quantum wells for efficient polarization modulation;Japanese Journal of Applied Physics;2020-07-28
2. Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells;Journal of Crystal Growth;2000-12
3. Temperature dependence of the band gap in InAsyP1−y;Applied Physics Letters;2000-05-08
4. Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Structural and optical investigation of InAsxP1−x/InP strained superlattices;Journal of Applied Physics;1998-01-15
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