Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

Published:1999 Issue:6 Volume:17 Page:2530
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee Chong-Yi,Shiao Hung-Pin,Wu Meng-Chyi,Chen Chyuan-Wei

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subwavelength Plasmonic Lasing from a Semiconductor Nanodisk with Silver Nanopan Cavity;Nano Letters;2010-08-12

2. Metamorphic InAsyP1−y (y=0.30–0.75) and AlδIn1−δAsyP1−y buffer layers on InP substrates;Applied Physics Letters;2007-05-21

3. Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells;Journal of Applied Physics;2003-09

4. The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes;Solid-State Electronics;2002-09

5. Effect of InGaP Barrier Thickness on the Performance of 1.3-µm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes;Japanese Journal of Applied Physics;2002-06-15

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