Metamorphic InAsyP1−y (y=0.30–0.75) and AlδIn1−δAsyP1−y buffer layers on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2742649
Reference20 articles.
1. Chapter 1 Low-Field Electron Transport
2. INDIUM ARSENIDE (InAs)
3. Tantalum doping and high resistivity in aluminium antimonide
4. O. Madelung, Physics of III-V Compounds (Wiley, New York, 1964), p. 352.
5. Microwave noise characteristics of AlSb/InAs HEMTs
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1. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
2. STRUCTURAL, ELECTRONIC, THERMODYNAMIC AND THERMAL PROPERTIES OF ZINC-BLENDE InP, InAs AND THEIR InAsx P1-x TERNARY ALLOYS VIA FIRST PRINCIPLES CALCULATIONS;International Journal of Modern Physics B;2013-10-15
3. Influence of buffer layer thickness and epilayer’s growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD;Solid State Communications;2011-06
4. Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates;Journal of Crystal Growth;2011-01
5. InAsyP1−y metamorphic buffer layers on InP substrates for mid-IR diode lasers;Journal of Crystal Growth;2010-04
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