Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer
2. 2.7 [micro sign]m LEDs for water vapour detection grown by MBE on InP
3. Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
4. Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures
5. Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001)
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1. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
2. Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch;Journal of Crystal Growth;2017-04
3. Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE;Crystal Growth & Design;2016-03-24
4. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP;Applied Physics Letters;2015-06-08
5. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
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