Temperature dependence of the band gap in InAsyP1−y
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126455
Reference27 articles.
1. Band structure engineering of semiconductor lasers for optical communications
2. 1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
3. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
4. Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes
5. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
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