InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104310
Reference9 articles.
1. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
2. Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
3. Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
4. GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device
5. GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect device
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1. InAs–InP Superlattice Nanowires with Tunable Phonon Frequencies;Advanced Physics Research;2024-03-27
2. Microstructural, magnetotransport, and electronic subband studies of InAsxP1−x/InP modulation-doped strained single quantum wells;Journal of Physics and Chemistry of Solids;2002-05
3. Structural and optical characterization of nanocrystals of the InAs–InP system embedded in amorphous SiO2 thin films;Thin Solid Films;2001-12
4. Preparation and optical properties of InAs0.4P0.6nanocrystal alloy embedded in SiO2thin films;Semiconductor Science and Technology;2001-05-11
5. Temperature dependence of the band gap in InAsyP1−y;Applied Physics Letters;2000-05-08
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