Grazing-incidence x-ray fluorescence analysis for non-destructive determination of In and Ga depth profiles in Cu(In,Ga)Se2 absorber films-Reference-Cited by-同舟云学术

Grazing-incidence x-ray fluorescence analysis for non-destructive determination of In and Ga depth profiles in Cu(In,Ga)Se2 absorber films

Published:2013-09-09 Issue:11 Volume:103 Page:113904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Streeck C.,Brunken S.,Gerlach M.,Herzog C.,Hönicke P.,Kaufmann C. A.,Lubeck J.,Pollakowski B.,Unterumsberger R.,Weber A.,Beckhoff B.,Kanngießer B.,Schock H.-W.,Mainz R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4821267

Reference22 articles.

1. Band-gap engineering in Cu(In,Ga) Se2 thin films grown from (In,Ga)2Se3 precursors

2. Back surface band gap gradings in Cu(In,Ga)Se2 solar cells

3. In situ analysis of elemental depth distributions in thin films by combined evaluation of synchrotron x-ray fluorescence and diffraction

4. Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films

5. Compositional depth profiling of polycrystalline thin films by grazing-incidence X-ray diffraction

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