Migration of ion‐implanted krypton in silicon during anneal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323469
Reference10 articles.
1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
2. Observation of ion bombardment damage in silicon
3. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
4. Influence of thermal history on the residual disorder in implanted <111> silicon
5. Annealing characteristics of highly P+‐ion‐implanted silicon crystal—two‐step anneal
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1. Interference of arsenic diffusion by argon implantation;Radiation Effects;1980-01
2. Implant redistribution in high-dose ion implanted and annealed silicon;Radiation Effects;1980-01
3. Correlation of atomic distribution and implantation induced damage profiles in be-ion implanted Si;Radiation Effects;1980-01
4. Basic Implantation Processes;Site Characterization and Aggregation of Implanted Atoms in Materials;1980
5. 2 Diffusion in Si - References;Diffusion in Semiconductors
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