Implant redistribution in high-dose ion implanted and annealed silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578008209234
Reference5 articles.
1. The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted si
2. The recrystallization of ion-implantedsilicon layers
3. Migration of ion‐implanted krypton in silicon during anneal
4. The application of high-resolution Rutherford backscattering techniques to near-surface analysis
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1. Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon;Journal of Applied Physics;1998-12-15
2. RBS studies of nickel behavior in silicon, amorphized with nickel ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
3. Extended Defects from Ion Implantation and Annealing;Rapid Thermal Processing;1993
4. Dopant redistribution during annealing of amorphized Si〈111〉;Philosophical Magazine A;1991-03-01
5. A systematic analysis of defects in ion-implanted silicon;Applied Physics A Solids and Surfaces;1988-01
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