Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4963708
Reference41 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
3. Effects of nitridation in gate oxides grown on 4H-SiC
4. Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
5. Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density
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2. The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor;Electronics;2024-01-31
3. Impact of carbon–carbon defects at the SiO2/4H-SiC (0001) interface: a first-principles calculation;Journal of Physics D: Applied Physics;2021-10-14
4. Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source;Journal of Materials Science: Materials in Electronics;2021-05-17
5. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19
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