Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106065
Reference12 articles.
1. Epitaxial growth of β–SiC on Si by low-temperature chemical vapor deposition
2. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
3. Raman spectra of amorphous SiC
4. Deposition of SiC films by pulsed excimer laser ablation
5. Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si
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