Raman scattering studies of chemical‐vapor‐deposited cubic SiC films of (100) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341533
Reference31 articles.
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2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
4. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
5. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
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