Smoothing of Si0.7Ge0.3 virtual substrates by gas-cluster-ion beam
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2041829
Reference24 articles.
1. High electron mobility in modulation‐doped Si/SiGe
2. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
3. High-performance Si/SiGe n-type modulation-doped transistors
4. Surface morphology of related GexSi1−xfilms
5. On the nature of cross‐hatch patterns on compositionally graded Si1−xGexalloy layers
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1. The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates;Nanomaterials;2022-02-17
2. Development of a Gas Cluster Ion Source and Its Application for Surface Treatment;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-03
3. Effect of argon cluster ion beam on fused silica surface morphology;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-01
4. Design and experimental testing of a gas cluster ion accelerator;Chinese Physics C;2017-08
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