Single vacancy defect spectroscopy on HfO2using random telegraph noise signals from scanning tunneling microscopy-Reference-Cited by-同舟云学术

Single vacancy defect spectroscopy on HfO2using random telegraph noise signals from scanning tunneling microscopy

Published:2016-02-28 Issue:8 Volume:119 Page:084304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Thamankar R.¹^ORCID,Raghavan N.¹^ORCID,Molina J.²,Puglisi F. M.³,O'Shea S. J.⁴,Shubhakar K.¹,Larcher L.⁵⁶,Pavan P.³^ORCID,Padovani A.⁶^ORCID,Pey K. L.¹^ORCID

Affiliation:

1. Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372

2. National Institute of Astrophysics, Optics and Electronics, Tonantzintla, Puebla, Mexico

3. DIEF—Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, 41125 Modena, Italy

4. A*STAR Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Singapore 138634

5. DISMI—Università di Modena e Reggio Emilia, 42122 Reggio Emilia, Italy

6. MDLab s.r.l., Loc. Grand Chemin 30, 11020 Saint Christophe, Aosta, Italy

Funder

Singapore University of Technology and Design (SUTD)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941697

Reference50 articles.

1. Physical model of BTI, TDDB and SILC in W02-based high-k gate dielectrics

2. Role of oxygen vacancies in HfO2-based gate stack breakdown

3. Random telegraph noise in highly scaled nMOSFETs

4. The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach

5. Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

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