Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

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Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Published:2020-12-01 Issue:49 Volume:12 Page:55000-55010
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ranjan Alok¹^ORCID,O’Shea Sean J.²^ORCID,Bosman Michel²³^ORCID,Raghavan Nagarajan¹^ORCID,Pey Kin Leong¹^ORCID

Affiliation:

1. Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487 372

2. Agency for Science Technology and Research, Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138 634

3. Department of Material Science and Engineering, National University of Singapore, Singapore, 117 575

Funder

Ministry of Education - Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c17107

Reference66 articles.

1. Recent trends in neuromorphic engineering

2. Neuro-Inspired Computing With Emerging Nonvolatile Memorys

3. Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

4. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

5. Two-dimensional atomic crystals

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