Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation-Reference-Cited by-同舟云学术

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Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation

Published:2024-04 Issue:4 Volume:45 Page:586-589
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kang Yu¹^ORCID,Ma Weiming¹^ORCID,Wen Xiaolei²^ORCID,Xu Yang¹^ORCID,Hu Huan³^ORCID,Zhao Yuda¹^ORCID,Yu Bin¹^ORCID

Affiliation:

1. College of Integrated Circuits, Zhejiang University, Hangzhou, China

2. Center for Micro and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, China

3. ZJUI Institute, Haining, China

Funder

National Key Research and Development Program of China

NSFC

NSFC of Zhejiang Province

Young Elite Scientists Sponsorship Program by the China Association for Science and Technology

Zhejiang University (ZJU) Micro-Nano Fabrication Center

ZJU-Hangzhou Global Scientific and Technological Innovation Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10441811.pdf?arnumber=10441811

Reference24 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

2. Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

3. Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

4. Emerging 2D Memory Devices for In‐Memory Computing

5. Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling

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