Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516842
Reference19 articles.
1. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
2. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
3. Defects in epitaxial multilayers
4. Relaxed template for fabricating regularly distributed quantum dot arrays
5. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer
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