Acceptor, compensation, and mobility profiles in multiple Al implanted 4H‐SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2813022
Reference12 articles.
1. Electrical activation of high-concentration aluminum implanted in 4H-SiC
2. Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
3. Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
4. Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
5. Low-dose aluminum and boron implants in 4H and 6H silicon carbide
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