Strain profile of (001) silicon implanted with nitrogen by plasma immersion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2734957
Reference31 articles.
1. Multiple gate oxide technology using nitrogen implantation and high-pressure O2oxidation
2. Microstructural characterization of nitrogen‐implanted silicon‐on‐insulator
3. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals
4. Point defects and dopant diffusion in silicon
5. Semiconductor applications of plasma immersion ion implantation
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2. Measurement of microscopic surface deformation due to low energy ion bombardment on Si(111);Surface Science;2014-03
3. Strain-profile determination in ion-implanted single crystals using generalized simulated annealing;Journal of Applied Crystallography;2010-09-10
4. Strain profiles in thin films: influence of a coherently diffracting substrate and thickness fluctuations;Journal of Applied Crystallography;2008-12-06
5. Plasma Immersion Ion Implantation With Lithium Atoms;IEEE Transactions on Plasma Science;2008-10
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