Multiple gate oxide technology using nitrogen implantation and high-pressure O2oxidation
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation
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2. HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation;Vacuum;2009-05
3. Strain profile of (001) silicon implanted with nitrogen by plasma immersion;Journal of Applied Physics;2007-05-15
4. Experimental difficulties and artefacts in multiferroic and magnetoelectric thin films of BiFeO3, Bi0.6Tb0.3La0.1FeO3and BiMnO3;Philosophical Magazine Letters;2007-03
5. Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
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