Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371852
Reference21 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
3. Bowing parameter of the band-gap energy of GaNxAs1−x
4. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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