Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3502482
Reference20 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Localized high-energy emissions from the vicinity of defects in high-efficiencyGaxIn1−xN∕GaNquantum wells
3. Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
4. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
5. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
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