High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3190504
Reference12 articles.
1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2. High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers
3. Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
4. Photonic crystal laser lift-off GaN light-emitting diodes
5. Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
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