Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes-Reference-Cited by-同舟云学术

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Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

Published:2015-01-19 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Seo Tae Hoon,Park Ah Hyun,Park Sungchan,Kim Yong Hwan,Lee Gun Hee,Kim Myung Jong,Jeong Mun Seok,Lee Young Hee,Hahn Yoon-Bong,Suh Eun-Kyung

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep07747.pdf

Reference29 articles.

1. Ponce, F. A. & Bour, D. P. Nitride-based semiconductors for blue and green light-emitting devices. Nature 386, 351–359 (1997).

2. Schubert, E. F. & Kim, J. K. Solid-state light sources getting smart. Science 308, 1274–1278 (2005).

3. Krames, M. R. et al. Status and future of high-power light-emitting diodes for solid state lighting. J. Display Tech. 3, 160–175 (2007).

4. Horng, R. H. et al. Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders. Appl. Phys. Lett. 93, 111907 (2008).

5. Lo, M. H. et al. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface. Appl. Phys. Lett. 95, 041109 (2009).

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